【摘要】 在同时考虑磁场和高温高压的情况下,应用么正变换和线性组合算符法,研究了电子自旋对弱耦合二维磁极化子自陷能的影响。对 InAs半导体所作的数值计算结果表明,不同方向的电子自旋使弱耦合二维磁极化子的自陷能分裂为二。分裂的程度随磁场的加强而加剧。随着磁场或温度的增加,磁极化子的自陷能减小而电子自旋能量与磁极化子自陷能之比增大。当磁场足够强或温度足够高时,电子自旋能量与磁极化子自陷能之比是很大的。更多还原

【Abstract】 Under the circumstances of magnetic field,high pressure and high temperature,the influence of the electron-spin on the self-trapping energy of the weak-coupling 2-D magnetopolaron was studied by using unitary transformations and the linear combination operator method.Numerical calculation,with InAs semiconductor as an example,illustrated that the self-trapping energy level of the weak-coupling 2-D magnetopolaron was divided into two by the electron-spin of different direction.The split self-trapping energy level was more marked with increasing magnetic field.The self-trapping energy of the magnetopolaron decreased and the ratio of electron-spin energy to the self-trapping energy of the magnetopolaron increased with increasing magnetic field or temperature.The ratio of electron-spin energy to the self-trapping energy of the magnetopolaron was very large,when the magnetic field performed sufficient strong and the temperature performed sufficient high.更多还原