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不同载体表面负载TiO2薄膜的离子掺杂研究

Researches in ion doping of TiO2 thin film on different substrates

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【作者】 陈建华赵翠华龚竹青王晓林刘自力

【Author】 CHEN Jian-hua~(1,2),ZHAO Cui-hua~1,GONG Zhu-qing~3,WANG Xiao-lin~1,LIU Zi-li~(2,4)(1.College of Resources and Environment,Guangxi University,Nanning 530004,China;2.College of Chemistry and Chemical Engineering,Guangxi University,Nanning 530004,China;3.School of Metallurgical Science and Engineering,Central South University,Changsha 410083,China;4.College of Chemistry and Light Chemical Industry,Guangzhou University,Guangzhou 510405,China)

【机构】 广西大学资源与环境学院中南大学冶金科学与工程学院广西大学化学化工学院 广西南宁530004广西大学化学化工学院广西南宁530004湖南长沙410083广州大学化学与轻化工学院广东广州510405

【摘要】 TiO2薄膜是解决TiO2回收的有效方法,缺点是TiO2活性低,寻找合适的载体以及提高TiO2薄膜的光催化活性,是TiO2负载薄膜技术需要解决的核心问题。研究了13种离子对负载在釉面瓷砖、玻璃、陶瓷、钛片、铝片和不锈钢片6种载体上TiO2薄膜的掺杂,并从界面材料结构、双电层结构等方面讨论了离子掺杂与载体对TiO2薄膜光催化活性的影响。结果表明,TiO2薄膜的离子掺杂效果不仅和离子掺杂浓度、种类有关,而且还与载体类型有关。TiO2薄膜和非金属载体主要形成复合半导体结构,改善掺杂离子对载流子的捕获能力。金属载体与TiO2薄膜之间主要形成肖特基势垒,有利于电子与空穴的分离。载体与TiO2薄膜之间形成的界面双电层结构能改变离子捕获中心与TiO2半导体费米能级间的相对位置,从而提高或降低离子对载流子的捕获能力。

【Abstract】 The main disadvantage with TiO2 thin film,an effective way for recovery of TiO2 in the photocatalyst,is its low activity.The key to TiO2 thin film catalysis is to find suitable substrates to enhance photocatalytic activity of TiO2 thin film.Doping of 13 metal ions into TiO2 thin film carried on 6 substrates(ceramic tile,glass,ceramic,titanium slice,aluminum slice and stainless steel slice) were studied,and influences of the doping on photocatalytic activity of TiO2 thin film were discussed from interface structure and double electronic layer between substrate and TiO2 thin film.The results showed that effects of ion doping were dependent upon not only the ion dopant and its concentration,but also the types of substrates.Composite semiconductor structure formed between TiO2 thin film and nonmetal substrate,which enhanced the carrier trap capability of metal ion dopants.Schottky barrier formed between metal substrate and TiO2 thin film favored separation of photogenerated-electrons and photogeneratedvacancies.Double electronic layer structure between substrates and TiO2 thin film changed the relative position between trap position of metal ions and Femi level of TiO2 semiconductor,accordingly lowered or enhanced the trapping capability of metal ion to carriers.

【基金】 国家自然科学基金项目(20466001);广西科技厅重点项目(2004ZD01)
  • 【文献出处】 工业催化 ,Congye Cuihua Industrial Catalysis , 编辑部邮箱 ,2005年12期
  • 【分类号】O614.411
  • 【被引频次】12
  • 【下载频次】359
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