【摘要】 采用传统陶瓷工艺制备了Bi VO₄掺杂的(Bi_1.5Zn_0.5)(Zn_0.5Nb_1.5)O₇（bismuth zincate niobate,BZN）介质陶瓷,用X射线衍射、扫描电镜以及电感电容电阻测试仪等对其烧结特性、相结构及介电性能进行了系统研究。结果表明:Bi VO₄掺杂能显著降低BZN的烧结温度,由1000℃降至850℃,同时可优化频率温度系数τf,由-450×10-6/℃变为-254×10-6/℃。Bi VO₄的掺杂量为5%,烧结温度为900℃时,BZN陶瓷具有较好的介电性能:介电常数ε=153,品质因数Q=2100,频率温度系数τf=-350×10-6/℃。更多还原

【Abstract】 Dielectric ceramics (Bi_ 1.5 Zn_ 0.5 )(Zn_ 0.5 Nb_ 1.5 )O_ 7 (bismuth zincate niobate , BZN) doped with BiVO_ 4 were prepared by the conventional ceramic processing technology. The sintering behavior, crystal structure and dielectric properties of BiVO_ 4 -doped BZN ceramics were investigated systematically by X-ray diffraction, scanning electron microscopy and inductance-capacitance resistance analysis. The experimental results indicate that BiVO_ 4 doping can decrease the sintering temperature remarkably (from 1 000 ℃ to 850 ℃) and optimize the temperature coefficient of the resonance frequency (changing from -450×10~ -6 /℃ to -254×10~ -6 /℃). The BZN ceramic with 5% BiVO_ 4 doping sintered at 900 ℃ has the optimum dielectric properties, i.e. a dielectric constant ε of 153, a quality factor Q of 2 100 and a temperature coefficient of resonance frequency τ_ f of -350× 10~ -6 /℃.更多还原