【摘要】 提出了一种新结构半导体双波长激光器 ,即用隧道结把两个发射不同波长的激光器结构通过外延生长的方法连接起来。通过计算和设计 ,制备了性能良好的大功率激射的双波长半导体激光器。双波长器件的实际激射波长分别为 95 1 nm和 987nm,为基模激射。器件在 5 3 0 m A直流工作时输出功率达到 5 0 0 m W,斜率效率为1 .3 3 W/A。在 2 A电流时功率达 2 .4W,斜率效率为 1 .3 8W/A;3 A电流时功率达 3 .1 W,斜率效率为 1 .2 1 W/A。更多还原

【Abstract】 A novel structure of high power dual-wav elength semiconductor laser diode is pr oposed and fabricated. Two kinds of lase r structure are cascaded by a high dopin g tunnel junction during the epitaxial g rowth. The lasers can emit at wavelength of 951 nm and 987 nm at the same time. The output power of the dual-wavelength laser is as high as 3.1 W at 3 A and 2.4 W at 2A. And the slope efficiency of th ese devices is about 1.33 A/W. Much high er output power can be reached for those dual-wavelength lasers when modifying t he structure.更多还原