【摘要】 在SiO2/Si基片上采用直流对靶溅射技术制备出Pt/Ti底电极;应用射频磁控溅射方法,利用快速热处理(RTA)工艺,制备出了具有良好铁电性能的Pb(Zr0.52Ti0.48)O3铁电薄膜。将样品进行10min快速热退火处理,退火温度700℃。测试分析表明:薄膜厚度比较均匀、表面基本平整、没有裂纹和孔洞、致密性好、薄膜样品的矫顽场强(Ec)为28.6kV/cm,剩余极化强度(Pr)为18.7μC/cm2,自发极化强度(Ps)为37.5μC/cm2,是制备铁电薄膜存储器的优选材料。更多还原

【Abstract】 Pb(Zr0.52Ti0.48)O3(PZT) ferroelectric thin films were prepared on Pt/Ti thin film bottom electrode by RF magnetron sputtering method ,followed by a rapid thermal annealing (RTA) process with temperature of 700℃ .Testing and analysis show that the PZT thin films are strongly oriented in pervoskite (100) and exhibit dense microstructure. The dielectric constant of the films is as hig h as 234.0.The electric hysteresis loop shows that coercive field(Ec), remanent polarization(Pr) and spontaneous polarization(Ps) of PZT thin films are 28.6kV/c m, 18.7μ C/cm2 and 37.5μ C/cm2, respectively.更多还原