【摘要】 利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。通过俄歇电子能谱(AES),X光电子能谱(XPS)等分析手段系统研究了在Si基片上直接生长BTO铁电薄膜过程中的界面扩散现象。根据研究得到的BTO/Si界面扩散规律,采用一种新型的“温度梯度调制生长方法”减小、抑制BTO/Si界面互扩散行为,实现了BTO铁电薄膜在Si基片上的选择性择优定向生长,为在Si基片上制备具有原子级平整度的择优单一取向的BTO铁电薄膜奠定了基础。更多还原

【Abstract】 BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE).The interface diffusion phenomena of BTO/Si were systematically studied by Auger electron spectroscopy(AES) and X-ray photoelectron spectroscopy(XPS).According to the mechanism obtained by the above methods,a new technique,called temperature gradient modulated growth method,was designed to decrease the diffusion and realize the selected orientation growth of the BTO thin films.This technique makes it possible to fabricate single selected orientation BTO ferroelectric thin films with atomic flatness directly on Si substrates.更多还原