【摘要】 采用射频磁控溅射法在高阻Cd0.9Zn0.1Te上制备了Cu/Ag导电薄膜,通过测量I-V曲线来评价接触性能。讨论了溅射功率和衬底温度对接触性能的影响,结果表明在两种不同功率下制备的薄膜不经过热处理已具有良好的欧姆接触性能,随着衬底温度的升高欧姆接触性能有所下降。通过对衬底的表面处理降低了表面漏电流。对试样进行退火处理使接触性能有所改善,退火温度在300℃时的接触性能要好于420℃。利用红外透过率来验证了退火温度范围及所选择加热衬底温度对高阻Cd0.9Zn0.1Te衬底没有影响。更多还原

【Abstract】 The Cu/Ag conductive thin films have been prepared on single crystal Cd_0.9Zn_0.1Te with radio frequency（RF） mangnetron sputtering and the contact performance was decided by I-V curve line.The influence of RF power and substrate temperature on contact performance was discussed.The results show that the films prepared with two different power have good contact performance without annealing.The process of the surface polishing can reduce leakage current.Contact performance can be improved by annealing,however the performance under 300℃ was better than under 420℃.Infrared transmission of the CZT substrate shows that the CZT was not influenced under the temperature range during annealing or deposition.更多还原