【摘要】 采用移动加热器法(THM)进行了新型红外探测器材料 Hg1-x-yCdxZnyTe(MCZT)的晶体生长,获得的MCZT晶片经汞源退火后进行了光学特性、结构特性、电学性能和组分均匀性的检测与分析,并且初步制作成近室温工作的长波光电导器件,对器件性能进行了测试与分析。结果表明用移动加热器法生长Hg1-x-yCdxZnyTe晶体是成功的,获得晶片的材料特性与器件性能初步达到了应用水平。更多还原

【Abstract】 Hg_1-x-yCd_xZn_yTe （MCZT） crystals were grown by travelling heater method （THM） as a promising material for infrared detectors. The investigations of optical characteristics, structural characteristics, electrical properties and composition homogeneity were carried out on the MCZT wafers after annealed in Hg vapor for an appropriate time. The wafers were then made into photoconductive devices and the device characteristics were also studied. The results showed that it was successful to grow MCZT crystals by THM. The material characteristics and device properties of MCZT were desirable for practical application.更多还原