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CoNbZr非晶软磁薄膜晶化动力学研究

The study of crystallization kinetics of CoNbZr amorphous soft magnetic thin films

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【作者】 蒋向东张怀武文歧业钟智勇杨争唐晓莉

【Author】 JIANG Xiang-dong~1,ZHANG Huai-wu~1,WEN Qi-ye~1, ZHONG Zhi-Yong~1,YANG Zheng~2,TANG Xiao-li~1 (1. School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology,Chengdu 610054, China; 2. Analytical and Testing Center, Sichuan University, Chengdu 610041, China)

【机构】 电子科技大学微电子与固体电子学院四川大学分析测试中心电子科技大学微电子与固体电子学院 四川成都610054四川成都610054四川成都610041四川成都610054

【摘要】 采用 DSC热分析技术,结合 XRD、TEM和AFM实验,对磁控溅射制备的 Co85.5Nb8.9Zr5.6非晶合金软磁薄膜进行了变温和等温晶化动力学的研究。研究结果表明:升温晶化时,薄膜的晶化的表观激活能为99.82kJ/mol;局域激活能随晶化度增加;在等温晶化过程中,平均激活能为 88. 51kJ/mol, Avrami 指数1.17~1.39, 晶化行为主要是一维表面晶化,晶核长大受扩散控制的过程。

【Abstract】 The crystallization kinetics of magnetron sputtering Co85.5Nb8.9Zr5.6 amorphous alloy thin films have been investigated by differential scanning calorimeter (DSC), XRD,TEM and AFM methods. As a result, the apparent activation energy for crystallization of Co85.5Nb8.9Zr5.6 amorphous alloy thin films are obtained as (99.817) Kissinger methods. The local activation energy of non-isothermal crystallization was discussed to be average value Ec=100.53kJ/mol. For isothermal crystallization, the local activation energy of Co85.5Nb8.9Zr5.6 amorphous alloy thin films yields average value Ec=88.51kJ/mol. The local Avrami exponent was used for discussing the nucleation and growth behaviors, which was in rang of 1.17~1.39, the variation of results indicated that the main crystallization process in governed by one-dimensional diffusion controlled growth at a decreasing nucleation rate during isothermal crystallization.

【基金】 国家重点基础研究发展计划(973计划)资助项目(51310Z05 1)
  • 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2005年02期
  • 【分类号】TB383
  • 【被引频次】12
  • 【下载频次】215
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