【摘要】 利用金属有机化学气相沉积(MOCVD)方法生长650 nm谐振腔半导体发光二极管(RCLED),利用光致发光(PL)谱和电致发光(EL)谱研究了其发光特性。由于上、下布拉格反射镜的影响,导致其PL强度只有普通LED的1/20;EL谱纯度有了很大提高,半峰宽(FWHM)由普通LED的20 nm降到4 nm以下。最好的器件测试结果表明,可以在60 mA、2.71 V下,实现1.45 mW以上发射功率,最窄FWHM在3 nm。更多还原

【Abstract】 Resonant oavity light emitting diodes(RCLED) of 650 nm wavelength was epitaxied by metal organic chemical vapor deposition(MOCVD),the emission property of photoluminescence(PL) and electro-luminesence(EL) was characterized.The PL intensity of RCLED is about 1/20 of common LED;the EL spectral purity is enhanced,EL spectral full width of half maximum(FWHM) is decreased from common LED’s 20 nm to RCLED’s 3-4 nm.The device characterization show that we can obtain above 1.45 mW EL emission power at 69 mA,2.71 V.更多还原