【摘要】 用电子束蒸发的方法制备了ZnS:Zn,Pb荧光薄膜,分别经400℃、600℃退火处理。采用X射线衍射(XRD)、X射线光电子能谱(XPS)、扫描电子显微镜(SEM)、光致发光(PL)谱等,表征了ZnS:Zn,Pb荧光薄膜的结构、成分、形貌和发光性能。实验表明,随着退火温度的升高,薄膜的结构程度提高,弥补了薄膜晶体表面的表面缺陷,提高了薄膜的发光性能。因此,退火处理是提高ZnS:Zn,Pb荧光薄膜发光性能的有效方法之一。更多还原

【Abstract】 ZnS:Zn,Pb thin films were grown on ITO substrates by electron beam evaporation method with sintered ZnS:Zn,Pb targets,and they are annealed in 400 ℃ and 600 ℃ respectively.The construction,ingredient,surface morphology and luminescence properties of the ZnS:Zn,Pb thin films are represented by X-ray diffraction(XRD),X-ray photoelectron spectroscope(XPS),scanning electron microscope(SEM) and photoluminescence(PL) spectra.The blue/green luminescent peak is detected in ZnS:Zn,Pb thin films.It is found that crystallization is improved,and the disfigurement on crystal surface is repaired with the annealing temperature increase.The luminescent propoerties of ZnS:Zn,Pb thin films are enhanced in 400 ℃ and 600 ℃ annealing processes.So it can be concluded that post-deposition annealing is one of effective methods to increase luminescence properties of ZnS:Zn,Pb phosphor thin films.更多还原