【摘要】 用射频磁控溅射及后退火(800 ℃、1 000 ℃和1 200 ℃)方法,在Si(111)衬底上制备出了 SiC纳米晶(nc SiC)薄膜。傅立叶变换红外光谱(FTIR)、X射线衍射谱(XRD)及扫描电子显微镜(SEM)形貌像等研究表明,制备出的nc SiC薄膜具有立方结构;样品经 800 ℃、1 000 ℃退火后,表面的纳米晶粒分别为10 nm和20 nm左右;而1 200 ℃退火后,样品晶化完全。光致发光(PL)研究表明,nc SiC薄膜室温条件下发射蓝光,发光峰峰位随退火温度的降低发生蓝移且发光峰强度变大;1 000 ℃退火后样品的发光峰在478 nm,800 ℃退火后发光峰在477 nm,800 ℃退火比1 000 ℃退火的样品发光强度高4倍。更多还原

【Abstract】 SiC nanocrystal(nc-SiC) films were prepared on Si(111) substrates by RF magnetron sputtering and then annealed at 800 ℃,1 000 ℃ and 1 200 ℃ for 30 min in a vacuum annealing system.The structure and crystallization of as-annealed SiC films were determined by Fourier transform infrared absorption(FTIR);X-ray diffraction(XRD) and the topography were observed by scanning electron microscopy(SEM).The results indicate that the nc-SiC strcture is β-SiC and the annealing temperature affects the topography of the films and the size of nanocrystalline grains,which is 10 nm and 20 nm at 800 ℃ and 1 000 ℃ respectively,and the film is wholly crystallized at 1 200 ℃.The measurement of photoluminescence(PL) of the nc-SiC films show that blue light emits at room temprature,the PL peak shifts to short wavelength side and the PL intensity becomes stronger as the annealing temperature decreases.更多还原