【摘要】 用直流磁控溅射方法制备的纳米Ge颗粒膜.通过XRD表征和LRS谱分析,发现沉积态颗粒膜主要为无定形态的Ge团簇,同时在溅射沉积过程中有少量Ge被氧化成非晶态的GeO.颗粒膜经过真空退火处理,形成纳米级的Ge晶和GeO晶体.退火态的膜层结构比沉积态的疏松.对于薄膜纳米颗粒的结构,提出Core-Shell结构模型,解释了Raman散射谱中新出现的150cm-1和215cm-1的Raman散射峰.更多还原

【Abstract】 <Abstrcat> Nanocrystalline Ge thin films were prepared by the method of DC Magnetron Sputtering. Via analysis by means of XRD and LRS, it was found that the as-deposited thin films mainly consisted of amorphous Ge clusters, and some of the particles were oxygenized into amorphous GeO. Nanocrystalline Ge and GeO were formed in the thin films during annealing treatment. Annealed film structure is looser than as-deposited one. We present the model of Core-Shell about the nanoparticles in the thin films, which explained the new Raman Scattering peaks of 150 cm^-1 and 215 cm^-1.更多还原