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低掺磷YPxV1-xO4单晶的生长与性能
Growth and characterization of low P dopant concentrations YPxV1-xO4 single crystal
【摘要】 用提拉法生长了四方锆石型YPxV1-xO4(x≤0.15)晶体.对晶体中P元素浓度的测定结果表明,YPxV1-xO4单晶可以按化学计量比生长.测定了晶体的晶胞参数、折射率和激光损伤阈值.晶体在400~3000nm波长范围的透过率达到80%且无吸收峰,而且,晶体几乎不发出荧光.综合各项测试结果可以推论:YPxV1-xO4晶体适于作为稀土离子的激光基质晶体.
【Abstract】 Tetragonal zircon-type YPxV1-xO4 (x≤0.15) single crystal has been pulled using the Czochraski method from YVO4-YPO4 solid-phase system. The analytic result for the concentration of P element indicates that YPxV1-xO4 single crystal can be grown with stoichiometric compositions. The crystal lattice parameters, refractive index and the optical damage threshold were tested. The transparency of crystal is close to 80% in wavelength 400-3?000?nm and absorption peak is not exist. In addition, the fluorescence emission of crystal is low. The test results illustrate that YPxV1-xO4 (x≤0.15) single crystal can be used as laser host crystal of rare earth ions.
【Key words】 Czochraski method; YPxV1-xO4 single crystal; refractive index; transparence; lattice parameters; optical damage threshold;
- 【文献出处】 福州大学学报(自然科学版) ,Journal of Fuzhou University(Natural Sciences Edtion) , 编辑部邮箱 ,2005年03期
- 【分类号】O782
- 【被引频次】1
- 【下载频次】53