【摘要】 利用背散射/沟道(RBS/C)技术、原子力显微镜(AFM)和光致发光(PL)谱研究了掺镨GaN薄膜的微结构和可见光发光特性。RBS/C结果表明,注入Pr后,在注入层引入了晶格损伤;注入样品经1 050℃退火后,部分损伤得到恢复,但是晶体质量没有恢复到注入前的状态。AFM结果表明,注入Pr后,表面凹凸不平,而且在注入区引起了膨胀,膨胀幅度达到23.368 nm左右。PL结果表明,在850~1 050℃退火,发光强度按e指数增加;当退火温度达到1 050℃,发光强度最强,经过数据拟合可得Pr3+的热激活能为5.8 eV。更多还原

【Abstract】 Recently, Pr-doped GaN has been attracting much interest because of its potential applications in optical communications and full color displays. Pr-doped GaN can produce IR emission at 1.3 μm and visible red emission at 650 nm. Pr ions are usually introduced into GaN either during growth process or by ion implantation. As we know that ion implantation doping has a lot of advantages, such as the selective doping of certain areas on the sample, the introduction of a large number of elements, and precise control of dopant concentration and depth distribution. It is necessary to anneal in order to achieve electrically or optically active doping and remove the damages induced by ion implantation. The micro-structure and photoluminescence (PL) properties of Pr-implanted GaN thin films have been studied. RBS/Channeling technique was used to explore the damage introduction of GaN∶Pr sample and the damage recovery at high annealing temperature. A complete recovery of the ion implantation damage can not be achieved at annealing temperatures up to 1 050 ℃. AFM results indicate that Pr ion implantation has caused surface roughness and pronounced material swelling with a step height as large as 23.368 nm. The PL experimental results indicate that the PL efficiency increases exponentially with annealing temperature up to the maximum temperature of 1 050 ℃. The thermal activation energy E_a is 5.8 eV by data fitting.更多还原