节点文献
ICP刻蚀中等离子体分布的模拟
Simulation of Plasma Distributing in ICP Etching
【摘要】 采用直接蒙特卡罗方法对反应器中的气体分布进行粒子模拟,从而得到在不同条件下的一组结果,给出了粒子浓度和温度与腔体尺寸的关系图。并对结果作出分析比较,得出不同的条件对粒子浓度以及温度等产生影响,结果对ICP刻蚀的工艺控制有参考价值。
【Abstract】 A two-dimension direct simulation Mont Carlo (DSMC) Method of the rarefied reactive flow of neutral and ions in a low-pressure inductively coupled plasma reactor is presented. The relationship curves between the particle density and chamber dimension of plasma reactor are calculated and analyzed. Influence of different parameters on the particle density of plasma and temperature distribution in the ICP Etching technology is discussed according to the results of the simulation.
【关键词】 等离子体分布;
粒子模拟;
直接模拟蒙特卡罗法;
电感耦合等离子体;
【Key words】 plasma distribution; particle simulation; the direct simulation monte carlo (DSMC); inductively coupled plasma(ICP);
【Key words】 plasma distribution; particle simulation; the direct simulation monte carlo (DSMC); inductively coupled plasma(ICP);
【基金】 国家杰出青年科学基金资助项目(50325519)
- 【文献出处】 电子器件 ,Journal of Electron Devices , 编辑部邮箱 ,2005年03期
- 【分类号】TN405
- 【被引频次】5
- 【下载频次】363