【摘要】 用溅射方法在Si(111)上生长Cu/Si,Ti/Si,Cu/Ti/Si薄膜。用XRD,红外吸收光谱,台阶仪对薄膜进行分析和测量。结果表明:在150℃溅射生长出的Cu/Ti/Si薄膜的缓冲层为硅化物TiSi2(311);Cu薄膜的主要成分是晶粒大小为17nm的Cu(111);Cu/Ti/Si(111)平均厚度为462nm,粗糙度为薄膜厚度的3%。在以TiSi2薄膜为缓冲层的Si(111)衬底上生长出的Cu薄膜抗氧化性较强、薄膜均匀性和致密性较好。更多还原

【Abstract】 The Cu/Si,Ti/Si,Cu/Ti/Si thin films were grown on Si(111) by magnetron sputtering.The films were analyzed and measured by XRD,infrared spectra,a-step device.The results show that the buffer of TiSi2(311) film was grown in the Cu/Ti/Si thin film;the main components Cu(111) of the Cu/Ti/Si films that the crystal size is 17 nm were grown at 150℃ by Sputtering.The average thickness of the Cu/Ti/Si films is 462 nm,the ratio between the roughness and the average thickness is 3%,the Cu film grown on the TiSi2/Si(111) which use the TiSi2 as buffer has the preferably anti-oxidation,uniformity and compact.更多还原