【摘要】 采用固相反应法,研究了MoO3掺杂对BiNbO4陶瓷微结构、烧结特性和微波介电性能的影响。对相对介电常数εr和品质因数Q随烧结温度的变化以及谐振频率温度系数随MoO3掺杂量的变化也进行了研究。MoO3的掺杂量x低于0.05时,实现了BiNbO4陶瓷在970℃以下的低温烧结,并且相转变温度也降低了约60℃。通过对εr以及介质损耗随温度的变化特性的研究,证实了缺陷偶极子对材料介电性能的影响。更多还原

【Abstract】 Investigated were microstructure, sintering behavior and microwave dielectric properties of BiNbO4 ceramics doped MoO3 by solid phase reaction method. Variations of dielectric constant εr, Q value with sintering temperature and that of temperature coefficient of resonator frequency with the content of MoO3 were investigated too. The doping amount of MoO3 did not surpass 5 mol%. BiNbO4 ceramics are sintered below 970℃ and its phase transition temperature is also lowered 60℃. Effect of defect dipoles on dielectric properties is approved by investigation of temperature dependence of dielectric constant εr and dielectric loss.更多还原