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水基前驱体法制备BST铁电薄膜的研究

Ba0.7Sr0.3TiO3 Thin Film Fabrication by Water-based Precursors

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【作者】 向飞刘颖朱时珍朱满康

【Author】 XIANG Fei1, LIU Ying1, ZHU Shi-zhen1, ZHU Man-kang2 (1. Department of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081, China; 2. Institute of Materials Science and Engineering, Beijing University of Technology, Beijing 100081, China)

【机构】 北京理工大学材料科学与工程学院北京工业大学材料学院薄膜材料研究室 北京100081北京100081北京100022

【摘要】 Ba1-SrxTiO3(BST)薄膜具有非线性强、漏电流小、不易疲劳等特点,在高密度动态随机存储器的应用,受到x了极大关注。以水基溶液为前驱体,调整Ti(OC4H9)4与H2O的配比以改变溶胶的黏度,并采用旋涂法制备了BST铁电薄膜。对水基BST前驱体溶液进行了DSC/TG和XRD分析。实验表明,采用较高浓度的水基前驱体,有利于薄膜的形成和均匀性。薄膜的相结构研究表明,随着退火温度的上升,BST薄膜的结晶度上升,而晶粒尺寸随之略有下降。

【Abstract】 Ba1- SrxTiO3 (BST) thin film is an important ferroelectric film for application in DRAM devices due to strong x nonlinear dielectricity, small leak current and fatigue characteristics. Using water-based solution as precursors, BST thin films were fabricated by spin coating technique. To obtain an homogenous and crack-less films, viscosity of the precursor solution was adjusted by changing the ratio of Ti(OC4H9)4 and H2O. The results show that the higher concentration of water-based precursor solution is beneficial to form a uniform thin film. Phase evolution by XRD indicated that crystallinity of BST thin film is increase but crystal size decrease a little as annealing temperature rising.

  • 【文献出处】 电子元件与材料 ,Electronic Components $ Materials , 编辑部邮箱 ,2005年04期
  • 【分类号】TB383
  • 【被引频次】2
  • 【下载频次】123
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