【摘要】 本文采用溅射沉积方法在双轴织构的Ni-W5%基带上制备了CeO2和Y2O3薄膜.研究表明CeO2薄膜在Ni基带上的外延方式受生长速率、生长温度的控制.在快速沉积情况下,CeO2薄膜为(111)取向,在沉积速率较低时,以(00l)取向为主.CeO2薄膜沉积过程中,可以有效避免Ni的氧化.在Y2O3的沉积过程中,Ni基带的氧化不可避免,但其氧化物也有良好的取向.更多还原

【Abstract】 In this article, cerium oxide and yttriumoxide buffer layers were deposited on RABiTS Ni-W5% tape by sputtering. The growth mode of cerium oxide thin film is controlledwith deposition rate and substrate temperature. With a high deposition rate, the films orient (111) direction, while it changes to (100) direction with low deposition rate. In the deposition of cerium oxide, oxidation of substrate has been avoided, but it is inevitable in the deposition of yttriumoxide.更多还原