【摘要】 介绍在等离子工艺中的等离子充电损伤,并且利用相应的反应离子刻蚀(RIE)Al的工艺试验来研究在nMOSFET器件中的性能退化。通过分析天线比(AR)从100:1到10000:1的nMOSFET器件的栅隧穿漏电流,阈值Vt漂移,亚阈值特性来研究由Al刻蚀工艺导致的损伤。试验结果表明在阈值Vt漂移中没有发现与天线尺寸相关的损伤,而在栅隧穿漏电流和低源漏电场下亚阈值特性中发现了不同天线比的nMOS器件有相应的等离子充电损伤。在现有的理解上对在RIEAl中nMOS器件等离子充电损伤进行了讨论,并且基于这次试验结果对减小等离子损伤提出了一些建议。更多还原

【Abstract】 Plasma charging damage in plasma processes is introduced in this paper and corresponding process experiment in RIE Al was conducted to investigate performance degradation of nMOSFET devices. Gate leakage current Ig,leak, threshold voltage shift, sub-threshold characteristics of nMOSFET devices with antenna ratio(AR) varying from 100 to 10 000 are analyzed to investigate the damage caused by Al etching process. Experiment results show that no damage antenna scale dependent is found in Vt shift while corresponding plasma charging damage is detected in gate leakage current Ig,leak and sub-threshold characteristics at low drain electric field in nMOS devices of different antenna ratio(AR).The current understanding of plasma charging damage of nMOS devices in RIE Al will be discussed and proposed suggests for minimizing plasma damage based on this experiment results are presented.更多还原