【摘要】 本文应用X射线衍射方法、红外光谱分析方法、扩展电阻测量方法研究了N+和N+2注入硅的应变、损伤度、扩展电阻率随注入剂量、注入深度变化的规律,形成Si3N4非晶层的条件.建立了多层的物理模型和胁变函数的数学模型,利用计算机和曲线拟合等手段,得出了合理的结论.更多还原

【Abstract】 In this paper, the regularity of the changed dosage and the depth of strain, the injury layer, the spreading resistance when N⁺and N⁺₂ were pouring into Si, were investigated. And the forming condition of Si₃N₄amorphous layer was also studied. The X-ray diffraction method, as well as the analytical method of infrared absorption, together with the measurement of spreading resistance was used. A physical multi-layered model and a mathematical model of strain function had been set up. By use of the computer and the curve fitting method, some rational conclusions were drawn.更多还原