节点文献
退火工艺对Pb(Zr0.55Ti0.45)O3铁电薄膜结晶取向的影响
The Influence of Annealing Processing on Crystalline Orientation of Pb ( Zr0.55Ti0.45) O3 Ferroelectric Thin Film
【摘要】 用射频磁控溅射法在Pt(111)/Ti/SiO2/Si上成功的制备了Pb(zr0.55Ti0.45)O3(PZT)铁电薄膜,通过传统退火(CFA)和快速退火(RTA)不同的退火方式,获得了(100)和(111)择优取向的铁电薄膜。对薄膜电学特性的测试表明,薄膜的织构对其电学性能有很大影响,(111)取向的薄膜与(100)取向的薄膜相比,剩余极化Pr和矫顽场Ec较大,但抗疲劳特性却较差。
【Abstract】 Lead zirconate titanate (Pb(Zr0.55Ti0.45 )O3 , PZT) thin films were prepared on the Pt( 111 )/Ti/SiO2/Si (100) substrates by RF-magnetron sputtering deposition, then the films were annealed by rapid thermal annealing process (RTA)and conventional furnace annealing (CFA).The highly (100)-and (111)- oriented PZT thin films have been obtained successfully through the control of processing parameters during post-anneal treatments. It was found the electric properties were strongly dependent on their crystalline orientation, the (111)-oriented films have higher remnant polarization and coercive field than the (100)-oriented thin films, but show poorer ferroelectric fatigue properties.
【Key words】 ferroelectric thin film； radio frequency magnetron sputtering； fatigue property；
- 【文献出处】 信息记录材料 ,Magnetic Recording Materials , 编辑部邮箱 ,2005年03期
- 【分类号】TB43
- 【被引频次】4
- 【下载频次】152