【摘要】 采用通常的固相反应工艺制备了Gd2（WO₄）₃陶瓷,在低场（E＜150 V／mm）下测试了样品的电学行为和介电常数随温度的变化。结果表明：随温度的升高,样品首先呈现出线性的Ohm特征,在250℃以后开始呈现出半导体特征下的非线性电学行为,并且这种非线性随温度的升高而增大；样品的介电常数和损耗因子在320℃～350℃有明显的变化。XRD分析表明：样品中存在Gd₂（WO₄）₃主晶相和W₂₀O₅₈次晶相。用WO₃的相变可以简单解释上述实验结果。更多还原

【Abstract】 Gd₂（WO₄）₃ ceramics are fabricated by the conventional solid-state reaction process. The electrical characteristics and dielectric properties of samples were measured for various ambient temperatures at low field （E＜150V/mm）. The results show that with the increase of temperature, the sample first exhibits good ohmic behavior, then displays stable nonlinear electrical properties characterized by semiconductivity above 250℃, and the nonlinearity increases with the temperature. The dielectric constant and loss tangent display an abrupt rising at 320℃～350℃. XRD analysis reveals that Gd₂（WO₄）₃ is the main phase and W₂₀O₅₈ is the second phase. Based on the phase transition of tungsten trioxide, these electrical properties of Gd₂（WO₄）₃ ceramics can be simply explained.更多还原