【摘要】 以锡盐和金属铟为原料采用胶体法制备ITO前驱物浆料,通过提拉法在镀有SiO2薄层的浮法玻璃基片上制备透明导电ITO薄膜。用TEM测定ITO前驱物浆料颗粒大小;用XRD、SEM、AES分别对ITO薄膜的结构和表面形貌进行表征;用分光光度计和四探针电阻仪检测ITO薄膜光电性能。结果表明:ITO前驱物浆料的颗粒粒径为2nm~15nm,具有较好的分散性和稳定性;ITO薄膜厚度越大,方电阻越小,平均透过率下降;ITO薄膜在波长为360nm~800nm区的透过率随膜厚增加有不同的影响;退火温度越高,膜方电阻越低;当膜厚为300nm、退火温度600℃时,膜方电阻达到258?/□,其透过率在波长550nm处达到89.6%,且薄膜表面平整。更多还原

【Abstract】 The transparent conduction ITO films were prepared on a soda lime float glass substrate by colloid technique. The colloidal solutions were made from indium metal ingots and hydrous tin (IV) chloride. The particle sizes of the colloid were observed using TEM. The optical properties of the ITO films were investigated using a spectrophotometer. The four-probe instrument measured the electrical resistances of the films. XRD, SEM and AES analyzed the structure and morphology of the ITO films. The results indicate that the particle size is in the range 2 nm~15 nm and the dispersal and stability of the colloid solution is good. The sheet resistance values of films decrease with the increase of the coating thickness or the annealing temperature. In the wavelength range of 360 nm~800 nm, the coating thickness of ITO films has a different effect on the transmittance. The sheet resistance of 300 nm ITO films annealed at 600℃ is 258 ohms per square. The ITO films have 89.6% transmittance at 550 nm wavelengths, and their surfaces were relatively uniform.更多还原