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低介电常数多孔二氧化硅薄膜的制备与研究
Preparation and Study of Low Dielectric Constant Mesoporous Silica Films
【摘要】 本文报道了一种新型纳米多孔低介电常数薄膜的制备方法。以十六烷基三甲基溴化铵 (CTAB)为模板剂 ,正硅酸乙酯为硅源 ,盐酸为催化剂 ,采用溶胶 凝胶技术 ,通过提拉法制备了二氧化硅透明介孔薄膜。用红外光谱、小角XRD、原子力显微镜对样品进行了表征 ,并采用椭偏仪和阻抗分析仪测量薄膜的折射率和介电常数。通过调节表面活性剂浓度和老化时间等实验条件制备出了K <2 .5、机械强度好的低介电常数薄膜。
【Abstract】 A novel route to prepare low-dielectric constant mesoporous SiO2 films is reported in this paper.Silicate sols are prepared with the precursor TEOS and template CTAB catalyzed by hydrochloric acid. The films are prepared by Dip-coating process. FTIR, XRD and AFM are used to characterize the films.The refractive index and dielectric constant are measureed by Ellipsometer and impedance analysis apparatus. The films with dielectric constant smaller than 2.5 can be acquired by adjusting the concentration of CTAB and aging time.
【Key words】 Sol-gel process; dielectric constant; porous silica; films;
- 【文献出处】 材料科学与工程学报 ,Journal of Materials Science and Engineering , 编辑部邮箱 ,2005年03期
- 【分类号】TN304
- 【被引频次】22
- 【下载频次】774