【摘要】 铜具有比铝更低的电阻率、更优异的抗电迁移性能,使用铜作为互连线材料不但可以减少RC延迟,而且还能提高集成电路的可靠性。在超大规模集成电路(ULSI)制造中用铜取代铝作为互连材料的铜互连技术发展非常迅速,铜互连工艺采用了许多新的技术,其中电沉积铜就是核心技术之一。介绍了目前ULSI铜互连中电沉积铜技术所涉及到的镀液组成、脉冲电流的应用、电沉积装置和性能等方面的研究状况。更多还原

【Abstract】 A review,with respect to the plating bath composition,the application of pulsed electric current,the electrodeposition device,and the properties of the electrodeposited copper coating,was given on the current state and trend in the research of electrochemically deposited copper used for interconnects of ultra-large-scale integrate circuits(ULSI).It was pointed out that the conventional interconnects made of aluminum in ULSI manufacturing have been replaced by that made of copper at a fast pace,which could be attributed to the lower resistivity and better electromigration resistance of copper than aluminum.At the same time,it would be worth noting that the replacement of conventional Al interconnects is greatly contributing to reduce the RC delays and improve the reliability of the ULSI,which is also beneficial to drive the development of various novel technologies and materials concerning copper interconnection.Specifically,electrochemical deposition of copper can be thought of as one of the representative novel key technologies for copper-interconnect fabrication.更多还原