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稀土Nd掺杂纳米SnO2薄膜气敏特性
Gas sensing properties of SnO2 nanometer films by Nd-doped
【摘要】 用真空气相沉积法在玻璃衬底上制备纯SnO2和掺稀土Nd的SnO2薄膜,在500℃氧气气氛条件下进行45min热处理,获得良好的纳米SnO2薄膜和掺稀土Nd的SnO2薄膜。结果显示掺Nd和热处理使纳米SnO2薄膜的结构、导电性能得到一定的改善。掺Nd5%的SnO2薄膜对气体的选择性和灵敏性均得到明显的改善,其中,对丁烷的选择性、灵敏度最好,在体积分数为7.2×10-3时,灵敏度可达到340,但对乙醇、丙酮气体的敏感性较差。
【Abstract】 SnO2 thin films and Nd-doped SnO2 thin films are prepared by vacuum evaporation on glass substrates to obtain the nano-SnO2 films at 500℃ with 45min of heat-treatment in O2.The results show that the structure and electric characteristics of the nano-SnO2 films are improved by heat-treatment and doping,the gas selectivity and gas sensitivity characteristics of SnO2 films by doping 5% Nd are also improved.The maximum sensitivity of above SnO2 thin films to butane can increase up to 340 at volume fraction of 7.2×10 -3 .But the sensitivity to alcohol,acetone is low.
【Key words】 nanometer; vapor phase deposition; gas sensing property; SnO2 thin films; Nd-doping;
- 【文献出处】 传感器技术 ,Journal of Transducer Technology , 编辑部邮箱 ,2005年06期
- 【分类号】TB383
- 【被引频次】5
- 【下载频次】156