【摘要】 材料的制备是研制半导体气敏传感器的关键环节。用气相反应法,以纯钨丝为原料,制备了WO3粉末,又以此WO3粉末为基材,制作了NO2气敏传感元件。在性能测试中发现,该元件对低浓度(10-10)NO2灵敏,灵敏度可达10倍左右,而且响应迅速,响应时间为1.5s。文中从材料的微观结构入手,对材料的敏感机理作了分析。更多还原

【Abstract】 The preparation of material is critical to fabrication of gas sensor made from semiconductor. Nanometer WO₃ was synthesized by gas-state reaction with tungsten filament and made into gas-sensor to NO₂.The gas-sensing measurements results revealed that these sensors show a sensitivity about 10 when put into NO₂ gas of very low density (about 10^-10) and respond quickly（about 1.5 seconds）.By analyzing micro-structure of the material, the mechanism of these sensors was uncovered.更多还原