【摘要】 在本底真空2.4×10-3Pa,溅射电压420V,溅射电流0.3A,氧分压0.17Pa,溅射总气压1.5Pa条件下制得TiO2薄膜,未退火时为无定型结构,300℃退火后为锐钛矿结构,600℃退火后锐钛矿与金红石结构共存,1000℃退火后完全转变为金红石结构。在一定工作温度下,随氧分压增加灵敏度逐渐升高;工作温度越高,灵敏度增加越缓慢;200℃下灵敏度随氧分压增加最快。在不同氧分压下分别计算得到激活能;认为Ti3+(int),Ti4+(int)和V2+O均存在且都对导电机制的形成起到作用,而Ti3+(int)作用最为显著。更多还原

【Abstract】 TiO₂ thin films are prepared under the condition of background vacuum 2.4×10^-3Pa, sputtering voltage 420 V, sputtering current 0.3 A, oxygen partial pressure 0.17 Pa and sputtering total gas pressure 1.5 Pa. The crystal structure is amorphism when TiO₂ thin films are not annealed; anatase when annealed at 300℃; coexistence of anatase and rutile when annealed at 600℃; completely rutile when annealed at 1 000℃. Sensitivity increases with growth of oxygen partial pressure at a constant temperature. The higher is the working temperature, the slower is the sensitivity increasing. Sensitivity increasing with oxygen partial pressure is the fastest at 200℃. Activation energy is respectively calculated at different oxygen partial pressure. We consider that Ti³⁺_（int）, Ti⁴⁺_（int）and V²⁺_O coexist and all play a role in the formation of conduction mechanism; operation of Ti³⁺_（int） is the most significant.更多还原