【摘要】 采用脉冲激光沉积技术,在Al2O3(0001)衬底上生长GaN薄膜,利用X射线衍射(XRD)、原子力显微镜(AFM)研究了不同沉积温度,不同沉积压强对所生长的GaN薄膜晶体结构特征的影响.研究表明,沉积温度影响GaN薄膜结构,在700~750℃沉积范围内随温度升高,所沉积生长的GaN薄膜具有良好的结晶质量.在5~10 Pa沉积气压范围内,提高气压有利提高GaN薄膜的结晶质量.更多还原

【Abstract】 GaN films have grown on Al₂O₃（0001）substrates by a KrF excimer pulsed laser deposition（PLD）.The crystalline quality,microstructure properties,and surface morphology of the GaN films were characterized by X-ray diffraction（XRD）,Atomic Force Microscope（AFM）.The influence of substrate temperature in the range of 700～800 ℃ on structural properties,and deposition pressure in range of 5～20 Pa on the crystallinity of GaN films are systematically studied.It is found that that the structural quality of GaN films is improved by increasing the growth temperature from 700～750 ℃,and the crystalline quality of the GaN films is improved with increasing deposition pressure to 10 Pa.The high-quality hexagonal wurtzite structures GaN film is deposited on Al₂O₃（0001）substrates using a substrate temperature of 750 ℃,a deposition pressure of 10 Pa.更多还原