【摘要】 为研究VLSI金属互连线的应力导致IC器件失效的问题,采用同步辐射源X射线衍射技术,原位测试了VLSI中Al互连线在电迁徙及加热条件下的应力变化.沉积态的Al互连线在室温下为拉应力.退火过程使拉应力逐渐减小,在300～350℃过程中由拉应力转为压应力.在电流密度为(3×105～4×106)A/cm2,275min的电徙动实验过程中,Al互连线阳极端由拉应力转变为压应力,并随后随着电流密度的增加而增加.此外,采用扫描电镜(SEM)观察了Al互连线的电迁徙失效特征及应力释放过程.更多还原

【Abstract】 In order to study the failure of IC devices induced by the stress in VLSI metal interconnect, In-situ observation of the stress changes of VLSI Al interconnect was studied under the electromigration and thermal conditions by using a synchrotron radiation x-ray diffraction technique. The tensile stress in deposited Al interconnects was measured in the room temperature. During the annealing process, the tensile stress gradually decreased and then conversed into the compress stress at the temperatures between 300 ℃ and 350 ℃. During the electronmigration tests in the range of 3×105 A/cm2 and 4×106 A/cm2 for 275 min, the tensile stress at the anode of Al interconnects changed into the compress stress, which then increased with the increasing of current density. Furthermore, the electronmigration failure characteristic and the stress relax of Al interconnects was observed by using the SEM.更多还原