【摘要】 使用热蒸发的方法在硅基底上制备了非定向氧化锌(ZnO)单晶纳米线阵列。经过热蒸发之后,在硅基底上形成一层均匀分布的ZnO点。在这些ZnO点上生长出非定向的ZnO纳米线阵列,其中的纳米线直径大约在10到20nm之间。考虑到实用,在制备样品的过程中硅基底的温度始终保持在500℃以下。然后测量了这些非定向ZnO纳米线阵列的场发射特性。在5.5V·μm-1场强下得到了10μA·cm-2的场发射电流密度;同时使用透明阳极技术观察了其场发射中心的分布。更多还原

【Abstract】 An array of non-aligned monocrystalline zinc oxide nanowires （ZnO NWs） is fabricated on a silicon substrate by thermal evaporation.The non-aligned ZnO NWs in the array are approximately 10～20 nm in diameter.During the fabrication,the temperature around the substrate is lower 500℃,which is conducive to practical application.Field emission is available from these ZnO NWs.The electric field that extracts 10?μA·cm^-2 current density is measured to be 5.5?V·μm^-1.Moreover,the emission site distribution （ESD） is also studied and the field emission is found from the whole sample surface,suggesting that the screen effect is almost avoided.更多还原