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纳米SiO₂/PI复合薄膜低温热膨胀系数的实验研究

Experimental Research on CTEs of SiO₂/PI Nanocomposites at Low Temperature

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【Author】 WANG Zheng-dao~1, JIANG Shao-qing~1, LI Yan~2,FU Shao-yun~2 (1.School of Civil Engineering and Architecture, Beijing Jiaotong University, Beijing 100044,China; 2.Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100080 China)

【机构】北京交通大学土木建筑工程学院；中国科学院理化技术研究所；中国科学院理化技术研究所北京100044；北京100044；北京100080；北京100080；

【摘要】高热膨胀系数是聚酰亚胺薄膜在低温下作为热绝缘和电绝缘使用的主要不利因素之一.为了降低其热膨胀系数,选用低热膨胀系数的无机纳米SiO2对其进行改性,利用溶胶凝胶技术,制备了不同SiO2含量的纳米SiO2/PI复合薄膜.利用自行设计的一套薄膜样品低温热膨胀系数测量装置,对纳米SiO2/PI复合薄膜室温至低温(77K)的热膨胀系数进行了测量,给出了SiO2含量、外加载荷对复合薄膜热膨胀系数的影响关系.更多还原

【Abstract】 The high coefficient of thermal expansion of PI film is one of the serious disadvantages for its application in the cryogenic as a thermal or electrical insulator. In order to decrease its CTE, nano_SiO₂ is used as an additive to synthesize different SiO₂_contents SiO₂/PI nanocomposite films by sol_gel technique. By use of a self_designed CTE testing device for film materials, the CTEs of SiO₂/PI nanocomposite films from room temperature to low temperature （77 K） are measured, and the influence of SiO₂_contents and pre_loading on CTEs is discussed.更多还原