【摘要】 提出了一种新结构单片集成增强/耗尽型(E/D)InGaP/AlGaAs/InGaAs赝配高电子迁移率晶体管(PHEMTs).外延层材料通过分子束外延技术生长,在室温下,其电子迁移率和二维电子气浓度分别为5410cm2/(V·s)和1.34×1012cm-2.首次提出了普通光学接触曝光分步制作增强与耗尽型的栅技术方法.研制出了单片集成E/D型PHEMTs,获得良好的直流和交流特性,最大饱和漏电流密度分别为300和340mA/mm,跨导为350和300mS/mm,阈值电压为0.2和-0.4V,增强型的fT和fmax为10.3和12.4GHz,耗尽型的fT和fmax为12.8和14.7GHz.增强/耗尽型PHEMTs的栅漏反向击穿电压都为-14V.更多还原

【Abstract】 The monolithic integration of enhancement- and depletion-mode (E/D-mode) InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistors (PHEMTs) with a 1.0μm gate length is presented.Epilayers are grown on SI GaAs substrates using MBE.For this structure,a mobility of 5410cm2/(V·s) and a sheet density of 1.34×10 12cm -2 are achieved at room temperature.During the gate fabrication of E/D-mode PHEMTs,a novel two-step technology is applied.The devices with a gate dimension of 1μm×100μm exhibit good DC and RF performances.Threshold voltages of 0.2 and -0.4V,maximum drain current densities of 300 and 340mA/mm,and extrinsic transconductances of 350 and 300mS/mm for E- and D-mode PHEMTs are obtained,respectively.The reverse gate-drain breakdown voltage is -14V for both E- and D-mode.Current-gain cutoff frequencies of 10.3 and 12.4GHz and power-gain cutoff frequencies of 12.8 and 14.7GHz for E- and D-mode are reported,respectively.更多还原