【摘要】 提出了一种具有p型埋层的PSOI器件耐压新结构,称为埋层PSOI(BPSOI)·其耐压机理是,通过p型埋层电荷产生的附加电场调制作用,导致表面电场分布中产生新的峰而使击穿电压提高;p型埋层的电中性作用增加了漂移区优化的浓度而使比导通电阻降低.借助二维MEDICI数值分析软件,获得此结构较一般PSOI的击穿电压提高52%~58%、比导通电阻降低45%~48%.更多还原

【Abstract】 A new PSOI structure with a p-type buried layer is developed,which is called BPSOI.Its mechanism of breakdown is an additive electric field modulation,which inducts new electric field peaks in surface electric field distribution by p-type buried layer charges.The on-resistance is decreased as a result of increasing drift region doping which is due to the neutralism of the p-type buried layer.The result is that the breakdown voltage is increased by 52%～58% and the on-resistance is decreased by 45%～48% in virtue of the 2D MEDICI simulation.更多还原