【摘要】 通过直流反应溅射制备了整流特性良好的ZnO/pSi异质结,并在该异质结上观察到了明显的光电转换特性.研究表明ZnO薄膜中的电子浓度在一个合适的数值(1.6×1015cm-3)时光电流最强,另外晶粒尺寸越大光电流越强.分析表明,电子浓度和晶粒直径对光电流的影响规律在很大程度上是载流子散射导致的.此外,还发现ZnO薄膜存在一个临界厚度,当薄膜厚度大于该临界厚度时,异质结的光电压和光电流都急剧衰减并很快接近于0.实验表明,这个临界厚度和ZnO薄膜(001)面最大晶粒直径一致.更多还原

【Abstract】 High-quality ZnO films were prepared on Si substrates using DC reaction sputtering technology.The photo-voltage characteristics of the ZnO/p-Si heterojunction were observed.The results show that the photo-current of the ZnO/Si achieves the maximum value when the carriers concentration in undoped the ZnO is 1.6×10~15cm~-3.And it shows that with the increasing of the size of ZnO crystal grain,the photo-current is enhanced.These can be attributed to the influence of the intrinsic defect of ZnO scattering.It is also found that when the thickness of ZnO films is reduced to 300nm,the photovoltage and photocurrent will decrease and almost disappear.更多还原