【摘要】 提出了一种埋空隙PSOI(APSOI)RESURF器件结构,此结构利用空隙相对低的介电系数,在器件纵向突破了传统SiO2埋层的耐压关系,提高了击穿电压;硅窗口的存在缓解了有源区的自热效应;不同衬底的场调制作用进一步优化了表面电场分布.在相同击穿电压条件下,此结构较一般PSOI结构只需1/4厚度的埋层,当漂移区厚度和埋层厚度均为2μm时可获得600V以上的击穿电压.更多还原

【Abstract】 A novel RESURF structure of buried air PSOI（APSOI） is developed.Its breakdown voltage is increased due to the low permittivity of the air gap by which the relation of breakdown voltage with a SiO₂ buried layer in vertical part is broken.The self-heating effect is alleviated as a result of the silicon window and the surface electric field are optimized by different substrate electric field modulation.This structure only needs a 1/4 buried layer compared with a normal PSOI structure under the condition of a certain breakdown voltage.When the thickness of the drift region is 2μm and the thickness of the buried layer is 2μm,more than 600V of breakdown voltage can be obtained.更多还原