【摘要】 对1064nm谐振腔增强型(RCE)光电探测器(PD)的光电响应特性进行了分析研究.利用MBE生长技术得到有源区分别为量子阱和量子点的1064nmRCE探测器的外延片,并对制作的探测器进行了各种光电特性测试.结果表明量子阱结构的RCE探测器量子效率峰值达到57%,谱线半宽6~7nm,峰值波长1059nm;而量子点结构的RCE探测器量子效率峰值达到30%,谱线半宽5nm,峰值波长1056nm.通过分析量子效率和吸收系数之间的关系,对两种结构器件的吸收进行了比较,发现虽然量子点探测器的吸收小,但通过合理设计共振腔等方法也可以达到较高的量子效率.两种结构的器件都有很好的I-V特性.更多还原

【Abstract】 Performances of a 1064nm resonant-cavity-enhanced photodetector(RCE-PD) are investigated.The structures of devices with the Absorption layers of quantum well (QW) and quantum dot (QD),respectively,were grown by molecular beam epitaxy(MBE).Testing the optical-electric properties of the RCE-PD fabricated by the structure wafer,the following results are obtained:for the QW RCE-PD,the peak quantum efficiency reaches 57%,FWHM is less than 7nm,and peak wavelength is 1059nm.For the QD RCE-PD,the peak quantum efficiency reaches 30%,FWHM is less than 5nm,and peak wavelength is 1056nm.The Absorptions of the two structures’ RCE-PD were compared.It is found that the QD can reach high quantum efficiency although its Absorption is small.The two structures’ devices both have good I-V character.更多还原