【摘要】 研究了一种新的钝化CdZnTe(CZT)器件表面的工艺,即先采用KOH KCl溶液对CZT表面进行处理,再用NH4F/H2O2溶液对其进行表面氧化的二步法钝化工艺.并借助俄歇电子能谱(AES)、微电流测试仪等手段对其表面钝化层的质量进行了鉴别,同时与KOH KCl和NH4F/H2O2两种工艺进行了比较.AES能谱分析表明,采用二步法工艺钝化,既可获得化学计量比较好的CZT表面,又可在表面形成一层起保护作用的氧化层.I V特性曲线显示,两步法钝化后CZT器件的漏电流与KOH KCl和NH4F/H2O2钝化相比都有一定程度的下降.说明文中提出的新工艺在CZT器件制备方面具有良好的应用前景.更多还原

【Abstract】 A novel passivation process is presented,in which first the CZT sample is etched by KOH-KCl agent and then passivated by NH₄F/H₂O₂ agent.The AES results show that the novel passivation process forms an oxide layer on the CZT surface and leaves a nearly stoichiometric interface layer between the oxide layer and CZT substrate.I-V characteristics show that the surface leakage current of the CZT detectors passivated by the novel process is reduced obviously in comparison with those either by KOH-KCl or NH₄F/H₂O₂ process.These results indicate that this passivation process has promising applications in the fabrication of CZT detectors.更多还原