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SiO₂/Si波导应力双折射数值分析

Numerical Analysis for a SiO₂/Si Waveguide Stress-Birefringence

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【Author】 An Junming~(1,2),Ban Shiliang~1,Liang Xixia~1,Li Jian~2,Gao Dingshan~2,Xia Junlei~2,Li Jianguang~2,Wang Hongjie~2,and Hu Xiongwei~2(1 Department of Physics,Inner Mongolian University,Huhhot 010021,China)(2 R&D Center of Optoelectonics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

【机构】内蒙古大学物理系；中国科学院半导体研究所；光电子研究发展中心；光电子研究发展中心呼和浩特010021中国科学院半导体研究所；北京100083；呼和浩特010021；北京100083；

【摘要】采用有限元法对SiO2/Si掩埋光波导制备工艺中的应力变化进行了系统的分析,在此基础上,应用有限差分束传播法(FDBPM)对应力光波导的双折射进行了计算.结果表明上包层的玻璃化过程是SiO2/Si波导形成水平方向和垂直方向应力差的主要原因,相应的应力双折射系数B在10-4量级.进一步的分析表明上包层B,P重掺杂可明显减小波导的双折射系数.更多还原

【Abstract】 The stress distribution of a SiO₂/Si waveguide during different sintering step is analyzed theoretically using the finite element method.At the same time,the birefringence of the waveguide is also analyzed by the finite difference beam propagation method （FDBPM）.The results show that the reasoning for the formation of the stress difference between the horizontal and vertical direction lies mainly in the overcladding sintering.The corresponding birefringence index is about 10^-4,which can be effectively reduced by depositing rich B and P in the overcladding.更多还原