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一种K波段双桥电容式RF MEMS开关的设计与制作
Design and Fabrication of K-Band Double Bridge Capacitive MEMS Switches
【摘要】 介绍了一种K波段双桥结构的电容式RFMEMS开关.该开关的结构特点是,以共面波导上的悬空金属膜为双桥结构,并且膜桥的支撑呈折叠弹簧结构.使用AgilentADS软件对该开关进行了设计和优化,结果表明,相比传统电容式单桥开关,该开关隔离度性能得到了很大提高.利用表面微机械工艺,在高阻硅衬底上制备了开关样品.双桥开关的在片测试结果表明:驱动电压为19.5V,“开”态的插入损耗约1.6dB@19.6GHz,“关”态的隔离度约46.0dB@19.6GHz.
【Abstract】 Design and fabrication of a novel K-band capacitive RF MEMS switch are reported.The switch consists of two suspended metallic membranes supported by a serpentine flexible spring over a coplanar waveguide.The design,which is realized with commercial EDA tools,is optimized based on a series of simulations.The simulations show that the proposed switch structure presents improved isolation in a relatively low RF frequency (K band).This switch is made using a silicon surface micromachining process.On wafer measurement is carried out.The threshold voltage is less than 19.5V,the insertion loss is 1.6dB@19.6GHz,and the isolation is 46.0dB@19.6GHz.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2005年07期
- 【分类号】TN402
- 【被引频次】8
- 【下载频次】237