【摘要】 分析了自加热效应对SON器件性能的影响,并与SOI器件进行了比较.提出构造散热通路的方法来抑制SON器件的自加热效应,分析了不同通路情况对自加热效应的抑制程度.还对散热性能较好的具有不连续空洞埋层的SON器件进行了研究,并分析了空洞大小和横向位置偏差对器件性能的影响,为器件结构设计提供了指导.更多还原

【Abstract】 The effect of self-heating in novel SON devices,compared with that in SOI devices,is comprehensively investigated.By making thermal dissipating paths through the void layer,the self-heating effect is effectively alleviated.In addition,the influence of the width of the paths is studied.The characteristics of the SON structure with a discrete void layer,which effectively suppresses the self-heating effect,are analyzed.The influence of the size and position of the discrete voids on device performance is analyzed,which gives guidelines for the device structure design.更多还原