【摘要】 在对SiGeHBT(异质结双极晶体管)载流子输运的研究基础上,建立了包括基区扩展效应SiGeHBT发射极延迟时间τe模型.发射极延迟时间与发射结势垒电容和集电结势垒电容密切相关.在正偏情况下,通常采用的势垒区耗尽层近似不再适用,此时需要考虑可动载流子的影响.本文重点分析了电流密度及发射结面积等参数对SiGeHBT发射极延迟时间的影响.更多还原

【Abstract】 Based on the analyzing and studying carrier transport of SiGe HBT （heterojunction bipolar transistor）,a model of the emitter delay time τ_e,including base extending effect,is established.τ_e is influenced by the emitter junction capacitance C_BE and the collector junction capacitance C_BC.When SiGe HBT is in the normal forward bias,depleted approximation is not suited and the influence of movable charge should be taken into account.The emitter transit time τ_e of an SiGe HBT model is analyzed and simulated.The influences of the current density and the area of the emitter junction to τ_e of SiGe HBT are also analyzed.更多还原