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Si/SiGe/Si-SOI异质结构的同步辐射双晶貌相术和高分辨三轴晶X射线衍射

Si/SiGe/Si-SOI by Synchrotron Radiation Double-Crystal Topography and High-Resolution Triple-Axis X-Ray Diffraction

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【Author】 Ma Tongda~1,Tu Hailing~1,Hu Guangyong~2,Shao Beiling~2,and Liu Ansheng~2(1 National Engineering Research Center for Semiconductor Materials,General ResearchInstitute for Nonferrous Metals,100088 Beijing,China)(2 National Center of Analysis and Testing for Nonferrous Metals and Electronic Materials,General Research Institute for Nonferrous Metals,100088 Beijing,China)

【机构】北京有色金属研究总院国家半导体材料工程研究中心；北京有色金属研究总院国家有色金属及电子材料分析检测中心；北京有色金属研究总院国家有色金属及电子材料分析检测中心北京100088；北京100088；北京100088；

【摘要】运用同步辐射双晶貌相术结合高分辨三轴晶X射线衍射对经原位低温热处理的Si/SiGe/Si SOI异质结构进行研究,发现Si层(004)衍射峰两侧半高宽(FWHMs)处同步辐射双晶形貌像特征存在明显差异.对同步辐射双晶摇摆曲线中Si层(004)衍射峰的不对称性给予了解释,同时阐明了高分辨三轴晶X射线衍射2θω扫描曲线中Si层(004)衍射双峰与Si层衍射结构的对应关系.更多还原

【Abstract】 Synchrotron radiation double-crystal topography (SRDT) in combination with high-resolution triple-axis X-ray diffraction (HRTXD) is employed to characterize Si/SiGe/Si-SOI subjected to in-situ low-temperature annealing.An obvious difference is found in the topographs taken at the FWHMs of the Si layers (004) diffraction peak.The asymmetry of the Si layers (004) diffraction peak is observed in synchrotron radiation double-crystal rocking curves and explained according to the results of SRDT and HRTXD.The double (004) diffraction peaks of the Si layers acquired by HRTXD 2θ-ω scan are respectively identified.更多还原

【关键词】同步辐射双晶貌相术；高分辨三轴晶X射线衍射；衍射双峰；
【Key words】 synchrotron radiation double-crystal topography； high-resolution triple-axis X-ray diffraction； double diffraction peaks；

【文献出处】半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2005年07期

【分类号】TN304
【被引频次】1
【下载频次】154

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