【摘要】 设计并研制成功了具有电阻栅结构的n-InGaP/p-GaAs/n-GaAs负阻异质结双极晶体管.研制出的器件IV特性优于相关文献的报导;得到了恒定电压和恒定电流两种模式的负阻特性曲线;对两种模式负阻特性产生的物理机制进行了解释;最后对此器件的应用前景进行了预测.更多还原

【Abstract】 The n-InGaP/p-GaAs/n-GaAs negative differential resistance heterojunction bipolar transistor with resistive gate structure (RGNDRHBT) is designed and fabricated successfully.The I-V characteristics of the fabricated device are better than those in Ref.[3].Both modes on negative differential resistance characteristics for constant voltage and constant current are found,and the physical mechanism of both modes on negative differential resistance characteristics are explained.Finally,the application prospect of this device is expected.更多还原