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选择液相外延法制备GaAs SNOM微探尖
GaAs Microtips Grown by Selective LPE for SNOM Sensors
【摘要】 使用GaAs(001)衬底模拟垂直腔面发射激光器(VCSEL)外延片表面,采用选择液相外延技术在其上面制备了用于超高密度光存储的扫描近场光学显微术GaAs微探尖阵列,并用扫描电子显微镜对微探尖阵列进行了表征.结果表明,在合适的条件下,微探尖呈金字塔状,并且有着较好的分布周期性.这对解决微探尖与VCSEL出光窗口的对准问题、批量制备问题和实现多探尖并行扫描具有实际应用价值.
【Abstract】 Selective liquid phase epitaxy(LPE) is used to fabricate GaAs microtips for scanning near-field optical microscopy(SNOM) sensors.The (001) GaAs substrates are used instead of the wafers of a vertical-cavity surface-emitting laser during the preliminary experiments.Scanning electron microscopy(SEM) images show that in appropriate conditions the microtips are pyramid-like and distribute uniformly on the wafers.This method not only settles the problem of aligning the microtips with light-emitting windows of VCSEL,but also has practical values in batch production and parallel scanning with several microtips.
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2005年06期
- 【分类号】TN248
- 【被引频次】6
- 【下载频次】129