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深能级杂质Zn对n型硅半导体的补偿特性
Compensation Characteristics of Deep Energy Level Impurity Zn to n-Type Silicon
【摘要】 为得到高B值(材料常数)的单晶热敏材料,采用高温气相扩散的方法在n型硅中掺杂深能级杂质Zn,得到高补偿的硅材料,并对该材料特性进行了测试和分析.结果表明:这种补偿硅具有热敏特性,该材料的B值为6300K左右,其阻值对温度的依赖关系与杂质的补偿程度有关.
【Abstract】 In order to obtain mono-crystal silicon thermistor material having high B-value,deep energy level impurity Zn is doped into n-type silicon using a high temperature gas phase diffusion method.Highly compensated silicon material is obtained.The characteristics of the material are measured and analyzed.It is shown that the compensated silicon material has thermally sensitive characteristics.The B-constant of the material is about 6300K and the resistance-temperature relationship of the material depends on the compensation degree of impurities.
【关键词】 深能级杂质;
费米能级;
多数载流子;
补偿度;
【Key words】 deep energy level impurity; Fermi level; majority carrier; degree of compensation;
【Key words】 deep energy level impurity; Fermi level; majority carrier; degree of compensation;
【基金】 中国科学院“西部之光”资助项目~~
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2005年06期
- 【分类号】TN304
- 【被引频次】9
- 【下载频次】230