【摘要】 提出了SOI基双级RESURF二维解析模型.基于二维Poisson方程,获得了表面电势和电场分布解析表达式,给出了SOI的双级和单级RESURF条件统一判据,得到RESURF浓度优化区(DOR,dopingoptimalregion),研究表明该判据和DOR还可用于其他单层或双层漂移区结构.根据此模型,对双级RESURF结构的降场机理和击穿特性进行了研究,并利用二维器件仿真器MEDICI进行了数值仿真.以此为指导成功研制了耐压为560V和720V的双级RESURF高压SOILDMOS.解析解、数值解和实验结果吻合得较好.更多还原

【Abstract】 A new 2D analytical model of the double RESURF effect for the SOI devices is proposed.Based on the 2D Poisson equation,a new analytical description of the surface potential and field distribution is obtained.A new unified criterion of double and single RESURF effects of SOI devices is developed.According to the model and the semiconductor device simulator MEDICI,the electric field reduction mechanism and breakdown characteristics of the p-top layer are discussed,and a RESURF doping optimal region for optimizing the drift region concentration is given.The double REURF SOI LDMOS with 560V and 720V breakdown voltages are manufactured successfully.The numerical simulation and experimental results are shown to support the analytical model.更多还原