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UV/UHV/CVD生长应变Si1-xGex层(英文)
Growth of Strained Si1-xGex Layer by UV/UHV/CVD
【摘要】 应用紫外光化学气相淀积技术在450和480℃超高真空的背景下在Si衬底上分别生长出应变Si1-xGex和Si材料.在此低温下,有效地控制了衬底中的杂质外扩以及界面的不清晰.X射线分析结果表明Si1-xGex材料结晶状况良好,二次离子质谱分析结果表明多层Si1-xGex/Si材料界面陡峭,说明该技术能够生长出高质量的应变Si1-x Gex/Si材料.
【Abstract】 Strained Si_ 1-xGe_x and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃,respectively.At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently.The strained Si_ 1-xGe_x and multilayer Si_ 1-xGe_x/Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are steep.The technique has a capability of growing high-quality Si_ 1-xGe_x/Si strained layers.
【Key words】 Si_ 1-xGe_x; ultrahigh vacuum; ultraviolet light; chemical vapor deposition;
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2005年04期
- 【分类号】TN405
- 【被引频次】4
- 【下载频次】77