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UV/UHV/CVD生长应变Si_1-xGe_x层（英文）

Growth of Strained Si_1-xGe_x Layer by UV/UHV/CVD

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【Author】 Hu Huiyong 1,Zhang Heming 1,Dai Xianying 1,Li Kaicheng 2,Wang Wei 1, Zhu Yonggang 1,Wang Shunxiang 1,Cui Xiaoying 1,and Wang Xiyuan 1(1 Key Laboratory of Ministry of Education for Wide Bade-Gap Semiconductor Materials and Devices, Microelectronics Institute,Xidian University,Xi’an 710071,China) (2 National Laboratory of Analog ICs,Chongqing 400060,China)

【机构】西安电子科技大学微电子研究所宽禁带半导体材料与器件教育部重点实验室；国家模拟电路实验室；西安电子科技大学微电子研究所宽禁带半导体材料与器件教育部重点实验室西安710071；西安710071；重庆400060；西安710071；

【摘要】应用紫外光化学气相淀积技术在450和480℃超高真空的背景下在Si衬底上分别生长出应变Si1-xGex和Si材料.在此低温下,有效地控制了衬底中的杂质外扩以及界面的不清晰.X射线分析结果表明Si1-xGex材料结晶状况良好,二次离子质谱分析结果表明多层Si1-xGex/Si材料界面陡峭,说明该技术能够生长出高质量的应变Si1-x Gex/Si材料.更多还原

【Abstract】 Strained Si_ 1-xGe_x and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450℃ and 480℃,respectively.At such low temperature,autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently.The strained Si_ 1-xGe_x and multilayer Si_ 1-xGe_x/Si structures are examined by X-ray diffraction,SMIS,etc.,and it is found that the materials have good crystallinity and the rising and falling edges are steep.The technique has a capability of growing high-quality Si_ 1-xGe_x/Si strained layers.更多还原